Fig. 5: Fabrication and characterization of the on-chip dually modulated photonic-crystal laser array.

a Top and cross-sectional SEM images of a dually modulated photonic crystal before and after air-hole-retained regrowth by MOVPE, respectively. The photonic crystal is fabricated for emission at \(\theta = 10^\circ\) and \(\phi = 0^\circ\!/180^\circ\). b Optical microscope image of the back side of the fabricated device, with electrodes clearly visible. c Device after having been flip-chip bonded to an IC package. Laser light emitted from the AR-coated surface of the SI-GaAs substrate. d Current light-output characteristics measured by driving electrodes n-1 and p-4 under pulsed conditions (100 ns, 1 kHz) at room temperature (RT). e Far-field patterns for emission at \(\theta = 10^\circ\) and \(\phi = 0^\circ/180^\circ\) at different injected currents. f Measured slope efficiency of all 100 integrated lasers.