Fig. 4: Origination of the rectifying behavior.

a I–V characteristics of the diodes based on acetone- and water-treated CuPc (7 nm), F16CoPc (1 nm)/CuPc (7 nm), and CuPc (7 nm)/F16CoPc (1 nm), respectively. The mesa widths of all the four cases are 10 μm. b Log–log plot of the I–V curves of diodes based on acetone- and water-treated Au (finger)/CuPc (7 nm)/Au (tube), showing three regimes distinguished by different m in I–Vm. c log(I)–V1/2 plot of the I–V curves of diode based on water-treated Au (finger)/CuPc (7 nm)/Au (tube). The inset illustrates the contacts among bottom finger electrode, CuPc spacer, and top tube electrode. d Carrier injection from Au tube and finger influenced by acetone/water treatment, organic heterojunction structure.