Fig. 1: Stoichiometry dependence of magnetism in the LAO/STO interface.
From: The emergence of magnetic ordering at complex oxide interfaces tuned by defects
a A comparison from the literature of the obtained saturation magnetic moment (m) of LAO/STO interfaces grown by different film growth parameters, that is, laser fluence (Eg) and oxygen partial pressure (Pg) using PLD: 10 u.c. LAO/STO (~5 × 5 mm2) from ref. 10, 5 u.c. LAO/STO (~5 × 5 mm2) from ref. 14, 10 u.c. LAO/STO (~5 × 5 mm2) from ref. 17, 24 u.c. LAO/STO from ref. 26, 5 u.c. LAO/STO from ref. 27 and 9 u.c. LAO/STO (~5 × 5 mm2) from this work. b The atomic ratio of La, Al, Ti and Sr of the grown 9-u.c. LAO/STO samples as a function of laser fluence Eg, determined by a surface-sensitive XPS. The insert shows a schematic of the X-ray photoemission geometry given by λeff = λ sin θTOA, where λeff and θTOA are the effective inelastic mean free path of the photo-emitted electrons and emission angle with respect to the surface normal, respectively. c 5 K magnetic hysteresis loops of the 9-u.c. LAO/STO samples as a function of Eg.
