Fig. 5: Anomalous Hall effect.
From: The emergence of magnetic ordering at complex oxide interfaces tuned by defects
a A schematic showing the measurement of the B-site cation-deficient LAO/STO sample in a Van der Pauw geometry with spontaneous out-of-plane-ordered magnets. b Temperature-dependent sheet dc resistance (Rxx) of the B-site cation-rich (Eg = 1.8 J/cm2, red squares) and B-site cation-deficient (Eg = 0.6 J/cm2, dark blue dots) 9-u.c. LAO/STO systems, measured at B = 0 T. The fully oxidized sample (Eg = 0.6 J/cm2, purple triangles) is highly resistive and insulating at low temperatures (< 100 K). c, d Sheet carrier density (c) and mobility (d) of the B-site cation-rich (Eg = 1.8 J/cm2, red squares) and B-site cation-deficient (Eg = 0.6 J/cm2, dark blue dots) 9-u.c. LAO/STO systems. The carrier transport of the samples was divided into two regimes, LOHE above 50 K and NOHE below 50 K. In the NOHE regime, the multiband conducting parameters [low-mobility (μ1) carrier density (n1) and high-mobility (μ2) carrier density (n2)] of the samples were derived using a two-band model. e A 2 K and 5 K Hall resistance, Rxy, of the B-site cation-deficient sample. The experimental 2 K–(5 K–) Rxy is fitted by deconvoluting NOHE and AHE parts. f A 2 K Rxy of the B-site cation-rich sample. g Hysteretic AHE and S-shaped Rxy parts of the B-site cation-deficient LAO/STO, measured at 5 K and after subtracting the LOHE part (Rxy = R0B) to the total Rxy (Exp.). h The deconvoluted hysteretic AHE part and the difference of the forward Rxy (F) and reverse Rxy (R) while sweeping the fields at 5 K. i A 5 K out-of-plane magnetic hysteresis loop (in the upper panel) and the deconvoluted AHE part (in the lower panel) of the Rxy for the sample. Dashed lines indicate the coercive field (HC = ~45 mT) of m and Rxy (AHE) while sweeping the applied fields.
