Fig. 1: Schematics of SCVLS growth mechanism and the grown MoS₂.

a Structure of the solid precursor used for the SCVLS method. b At growth temperature, MoO₃ vaporized and penetrated through the SiO₂ diffusion membrane. MoO₃ and NaF reacted to form liquid-phase Na₂Mo₂O₇ (colored in red) at the growth temperature. c Through reactive digging and the capillary effect, the liquid precursor gradually rose to the NaF matrix surface. d Sulfur vapor was introduced into the system and started to dissolve into the Na₂Mo₂O₇ liquid. e Liquid precursor sulfurized into the MoS₂ seed layer. f Capped by the MoS₂, the emerging liquid was redirected horizontally and converted into MoS₂ when it contacted and dissolved sulfur vapor at the edge of the MoS₂ flakes. g A 1-mm MoS₂ flake grown through the SCVLS method. Scale bar is 200 µm. h Magnified image of the MoS₂ grain edge. The fringes at the edge indicate the presence of the liquid precursor during the growth process. Scale bar is 20 µm.