Fig. 5: Transport properties of the MoS2 grown through the SCVLS method. | Nature Communications

Fig. 5: Transport properties of the MoS2 grown through the SCVLS method.

From: Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Fig. 5

a Schematic image of a back-gate monolayer MoS2 transistor. b Optical image of a monolayer and bilayer FETs. Both scale bars are 5 µm. c Gate-dependent conductance of devices shown in b. d Temperature-dependent transport property of the monolayer MoS2 FET shown in b. A clear MIT is observed at VGS of 30 V. e VDS-dependent source-drain current density of the monolayer device at different gate voltages. The channel length is 1.48 μm. f Log plot of the gate-dependent current density of the short channel mono- and bilayer devices under an 8-V source-drain bias. The on/off ratio is 5 × 108.

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