Table 1 Comparison of the different CVD methods.

From: Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Growth method

Maximum grain size (single crystal)

Mobility (cm2 V−1 S−1)

Maximum current density (μA μm−1)

On/off ratio

Reference

CVD MoS2 (MoO3 + S, substrate control)49

200 μm

25

 

107

ACS Nano 2015, 9, 4611

CVD MoS2 (MoO3 + S, flow control)50

300 μm

30

 

106

Adv. Sci. 2016, 3, 1500033

CVD MoS2 (MoCl5 + DMS, NaCl catalyst)51

50 μm

10.4

 

107

Nanotechnology 2017, 28, 465103

CVD MoS2 (MoO3 + S, molten Na:glass)32

563 μm

24

123

109

Appl. Phys. Lett. 2018, 113, 202103

CVD MoS2 (MoO3 + S with PTAS salt)42

200 μm

35

270

107

Nano Lett. 2018, 18, 4516

CVD MoS2 (Mo foil + S, soda–lime glass)52

400 μm

11.4

 

106

Nat. Commun. 2018, 9, 979

SCVLS MoS2

1.1 mm

33

230

5 × 108

This work

  1. All transport data were obtained from the back-gate, monolayer MoS2 FETs for comparison.
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