Fig. 4: Characterization of individual z-PNB devices.
From: Unzipping of black phosphorus to form zigzag-phosphorene nanobelts
a Top: schematic view of z-PNB devices. Bottom: optical image (left side) and AFM image (right side) of a 10-nm z-PNB device. b Transfer characteristics of z-PNB device (on a logarithmic scale, left axis) with drain–source voltages of 3 V, Ids, Igate, Vg, Vds are the source–drain current, gate leakage current, back gate bias, and drain to source bias, respectively. The leakage currents of both devices were plotted as a function of Vg (right axis) and found to be ~10−11 A. Inset: output curves (Ids − Vds) with Vg decreasing from −40 to 0 V at a step of 10 V. c Transfer characteristics of 109-nm z-PNB device with drain–source voltages of 0.05 V. The leakage current was found to be ∼10−11 A. Inset: output curves (Ids − Vds) with Vg decreasing from −40 to 0 V at a step of 10 V. dION/IOFF and hole mobility were extracted from different z-PNB devices as a function of the thickness of z-PNBs. Blue solid circle and red hollow circle represent the ION/IOFF and hole mobility, respectively. Note that all the electronic measurements were conducted at 300 K under N2 atmosphere. Inset: stability of z-PNB-based device before and after 10 days with PMMA protected. The ON/OFF ratio and hole mobility remained stable with the protection of PMMA after 10 days.
