Fig. 1: Design of the dielectric polymer/molecular semiconductor all-organic composite.
a Band diagram showing the possible charge transfer in the all-organic composite. b Schematic illustration of trap energy level introduced by the molecular semiconductors in the all-organic composite. The trap energy level can be calculated using Φe = EAms − EAp, where EAms and EAp are the electron affinities of the molecular semiconductor and the dielectric polymer, respectively. c Schematic representation of the trap energy level in polymer/insulating particle nanocomposites introduced through modification of polymer chain conformation and arrangement in the particle/matrix interfaces. The electron traps are located in the forbidden gap and close to the conduction band of the dielectric polymer. d–f Electrostatic potential distribution and area percentage in each electrostatic potential range of ITIC, PCBM, and DPDI.
