Fig. 4: Dynamic modulation within the intraband regime.
From: Fast electrical modulation of strong near-field interactions between erbium emitters and graphene
a Fermi energy as a function of time t using a sinusoidal function of frequency \({f}_{{\rm{mod}}}\) (schematic). The slow topgate is used to tune to EF ~ 0.8 eV, whereas the fast backgate provides the modulation between 0.7 and 0.9 eV, thus modulating the interaction strength within the intraband regime. b–e Time-resolved photon emission while the Fermi energy is modulated at different frequencies between 20 Hz and 5 kHz (red dots). Every time-modulated emission measurement is normalized to its mean value, so that the modulation does not depend on the excitation laser power or the photon collection efficiency. The black solid curves show the dynamic simulations of N ions located at the distribution of distances from graphene P(z) obtained from the emission contrast measurements and decay curves (see “Methods”). Note that the modulated emission is out of phase with the modulating Fermi energy, because a higher Fermi energy gives lower emission in the intraband regime.
