Table 1 Comparison of several metrics for EO modulators.

From: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

Platform

Structure

EO bandwidth (GHz)

Propagation loss (α, dB mm−1)

BVR (GHz V−1)

Half-wave voltage (Vπ, V)

Footprint, diameter (Ø) or active length

Loss-efficiency product (V⋅dB)

Line rate (Gbit s−1)

Format

Operating temperature range or ΔT

LNOI17

MZI

15

0.3

1.7

9

2 mm

5.4

22

OOK

ΔT = 20 °C

SOI51

MRR-assisted MZI

N/A

N/A

N/A

N/A

0.796 mm

N/A

1

OOK

22.5–100 °C

SOI46

MRR

N/A

N/A

N/A

N/A

Ø: 0.01 mm

N/A

1

OOK

ΔT = 15 K

SOI47

MRR

21

2.9

30

0.7

Ø: 0.0048 mm

N/A

25

OOK

ΔT = 7.5 °C

SOI8,a]

MZI

N/A

0.05

N/A

N/A

0.04 mm2

N/A

20

OOK

25–125 °C

POH25

MZI

>70

375

>12.5

~12

0.016 mm

75

72

OOK

20–80 °C

        

116

PAM4

 

POH29

Straight slot

>65

~414

>1.45

44.8

0.029 mm

~538

40

BPSK

−85 °C

InP10

MZI

37

0.69

14.8

2.5

4 mm

6.9

43

OOK

−40 °C

SOH34

MZI

20

1.7

13.5

1.48

1.5 mm

3.74

40

OOK

−85 °C

SOH35

MZI

32

9.3

14.5

2.2

0.75 mm

15.81

128

PAM4

−80 °C

SPH36

MZI

60

0.22

30

2

8 mm

3.5

56

OOK

20–95 °C

        

112

PAM4

 

SPH

MZI

68

0.22

38

1.8

8 mm

3.2

110

OOK

25–110 °C

This work

       

200

PAM4

 
  1. LNOI lithium niobate on insulator, N/A not available.
  2. aOperating wavelength: 1.3 µm.
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