Fig. 3: Electrical performance of doped CuI TFTs.
From: High-performance p-channel transistors with transparent Zn doped-CuI
a Optimised transfer characteristics of the CuI TFTs doped with different cations (Ga3+, Zn2+, Ni2+, Bi3+, Pb2+, and Sn4+). b, c Transfer characteristics and IDS1/2 curves of CuI:Zn/SiO2 TFTs with different Zn2+-doping contents (VDS = −40 V). d Output curves of optimised CuI:Zn5mol%/SiO2 TFT. e Negative-bias-stress results of the CuI:Zn/SiO2 TFTs as a function of Zn2+ doping content. f Linear mobility variation of the CuI:Zn5mol%/SiO2 TFT as a function of the temperature (295–123 K).
