Fig. 5: Performance in large background magnetic field.

a Magnetic field dependence of V_H/I in the quantum Hall regime for device G1 at 4.2 K. The curves span gate voltages corresponding to electron density 0.24–1.14 × 10¹² cm⁻² at zero field. b R_H determined locally at each point (V_g, B). c, d R_H and S_B^1/2 at 1 kHz along the horizontal lines in (b): c B = 1 T, d B = 3 T. Error bars are determined considering the standard error of the linear fit for R_H and the standard deviation of S_V^1/2 in a window of width 200 Hz centered at 1 kHz. All measurements are performed under 5 μA dc current bias.