Fig. 2: Hysteresis characteristics of Al2O3/2D perovskite heterostructure dielectric. | Nature Communications

Fig. 2: Hysteresis characteristics of Al2O3/2D perovskite heterostructure dielectric.

From: Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors

Fig. 2

a Transfer characteristic curves of MoS2 phototransistors at Vds = 1 V with Al2O3 and Al2O3/2D perovskite (n = 3, 10, and 40) dielectrics. The neglectable hysteresis loop is achieved by using Al2O3/(PEA)2(MA)2Pb3I10 (n = 3) heterostructure dielectric. b Output characteristic curves of the MoS2 phototransistor with Al2O3/(PEA)2(MA)2Pb3I10 (n = 3) heterostructure dielectric. c Comparisons of the drain-source current (Ids) evolution over time under continuous gate bias stress (Vgs = 2 V) for three devices. d Schematic illustration of the charging–discharging process for Au/2D perovskite/Au device. e Temporal response curves for Au/2D perovskite/Au device measured under dark. f Arrhenius plot of the ion decay rate 1/τ. The solid line represents the fitting result. Inset: The activation energy of 2D perovskite with different n values.

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