Fig. 3: Optoelectronic characteristics of the MoS2 phototransistor. | Nature Communications

Fig. 3: Optoelectronic characteristics of the MoS2 phototransistor.

From: Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors

Fig. 3

a Transfer characteristic curves of the device with Al2O3/(PEA)2(MA)2Pb3I10 (n = 3) dielectric measured at Vds = 1 V under different laser power density. b The corresponding light-to-dark current ratio extracted from a. c Plots of the photocurrent versus laser power density. Inset: Exponent (γ) extracted from c for each Vgs. d Gate voltage and Plight dependent photoresponsivity extracted from a. e The extracted constant photoresponsivity regardless of laser power density under different illumination levels (λ: 457, 660, 808, 914 and 1064 nm). f Plots of the gate voltage at the turning point versus incident wavelength.

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