Fig. 4: Analysis of surface defects in AlN SCs with high-temperature N2-annealing process. | Nature Communications

Fig. 4: Analysis of surface defects in AlN SCs with high-temperature N2-annealing process.

From: X-ray radiation excited ultralong (>20,000 seconds) intrinsic phosphorescence in aluminum nitride single-crystal scintillators

Fig. 4

a PL spectra of the AlN SCs under 266 and 325 nm laser excitation. The N2-rich-treated AlN shows obviously weaker PL emission than that of as-grown one under 266 nm laser excitation with equal excitation power. b Transmission spectra of the AlN SCs shows no obvious change after high-temperature N2-annealing process. The inset is differential transmission (dT). There are two variations of slope in the transmission curve, corresponding to the absorption of VN defects. c Proportion of atomic binds in AlN SC and N2-rich treated AlN SC. X-ray photoelectron spectroscopy (XPS) shows the characteristic peaks of Al 2p electrons (d, e) and N 1 s electrons (f, g).

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