Fig. 1: Structure and electrical characteristics of GeS device.
From: Ultrahigh drive current and large selectivity in GeS selector
a Schematic structure of an individual cell. b Cross-section TEM image of device displaying the thickness of each layer and corresponding EDS elemental mapping of W, Ge, S, Ti, and Al. The scale bar is 50 nm. c Repeatable DC I–V sweeps with uniform compliance current (10 mA) and low leakage current (10 nA). d Statistical distribution of OFF current and ON current for various fresh cells measured at 1/2 Vth and Vth, respectively. e Bidirectional threshold switching characteristic of GeS device. The arrows represent the switching directions. f Device performances with different device sizes and GeS thicknesses. ON/OFF current is independent on the size. The Vth linearly increases with increasing thickness, while the electric field is almost unchanged.
