Fig. 2: Transient characterization and endurance of GeS OTS selector.
From: Ultrahigh drive current and large selectivity in GeS selector
a Dynamical transient response of the device under triangular voltage pulses with amplitude of 9 V and rising/falling edge of 1 μs. The device shifts from OFF state to ON state within 10 ns and returns to OFF state within 100 ns. b, c Enlarged view of ON and OFF switching curves, respectively. d Dynamical response to multiple triangular pulses. e Endurance cycles of GeS device maintaining stable high- and low-resistance state. f Comparison of selectivity and JON of reported OTS devices with our work14,17,27,28,29,30,31. The ON current density and selectivity for other OTS selectors were calculated from currents and device sizes reported in related works.
