Fig. 3: GeS OTS-based artificial neuron.
From: Ultrahigh drive current and large selectivity in GeS selector
a Schematic of biological neuron and the artificial spiking neuron. A resistor (10 kΩ) is in series with the GeS device and the current response across the device is served as the response spiking signal. Reprinted with permission35. Copyright (2012) American Chemical Society. b Stochastic behavior of the stimulated neuron applied multiple near-threshold voltage pulses with amplitude (V) of 3.3 V, rising/falling time (trise/tfall) of 20 ns, and the duration time (tduration), of 300 ns. c The response under square pulses with different near-threshold voltages. d–f Frequency response of the artificial neuron to which are applied different triangular stimuli pulses, 4.8 V amplitude/30 μs rising/falling time, 4 V amplitude/30 μs rising/falling time and 4 V amplitude/8 μs rising/falling time, respectively.
