Fig. 4: Band structure of amorphous GeS.
From: Ultrahigh drive current and large selectivity in GeS selector
a Tauc plot of (αhν)1/2 versus photon energy hν of amorphous GeS film indicating the width of the energy gap. The thickness of the GeS film is around 780 nm. Variations of the absorption coefficient with the photon energy revealing the Urbach tail. b X-ray excited valence band spectra of GeS film showing the Fermi level. c PDS spectrum of GeS film showing the location of localized state. d Reconstructed qualitative energy band schematic of GeS glass, where EC represents the conduction band minimum. Filled traps are those filled with colors, empty traps (without electrons) being left white.
