Fig. 6: First-principles simulation of the switching mechanism.
From: Ultrahigh drive current and large selectivity in GeS selector
Evolution of the structure and the corresponding DOS for amorphous GeS (a, b) before and (c, d) after hole excitation. The dotted boxes (1) and (2) highlight the Ge pair and Ge chain before excitation, creating one filled and one empty trap state, respectively. The dotted circles (3) and (4) highlight the bond aligned Ge pair and longer Ge chain, respectively.
