Fig. 1: Phase conversion kinetics of formamidinium lead tri-iodide (FAPbI3) perovskite with a hetero-interface at the grain boundaries. | Nature Communications

Fig. 1: Phase conversion kinetics of formamidinium lead tri-iodide (FAPbI3) perovskite with a hetero-interface at the grain boundaries.

From: Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Fig. 1

a Photographs of FAPbI3 films on SnO2-coated ITO substrates with different annealing times at 150 °C. Control: bare FAPbI3, 1P: FAPbI3 with 1.67 mol% PEA2PbI4, 3P: FAPbI3 with 3.33 mol% PEA2PbI4, and 3F: FAPbI3 with 3.33 mol% FPEA2PbI4. b In situ grazing incident wide angle X-ray scattering (GIWAXS) measurements of corresponding films deposited on silicon wafer substrates. c Isothermal transformation diagrams showing the evolution of the α-FAPbI3 phase proportion in the films as a function of annealing time at 150 °C on silicon wafers (upper panel) and on SnO2-coated ITO substrates (lower panel).

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