Fig. 3: Temperature dependence and scaling of local and nonlocal resistance.
From: Bulk valley transport and Berry curvature spreading at the edge of flat bands
Inset of each panel shows schematic of band filling in that measurement. a, b Variation of local and nonlocal resistance with temperature at CNP for different electric fields. The region shaded with blue color is governed by Arrhenius activation and is the region used to show scaling relation in f. c, d Ratio of activation gaps for local and nonlocal resistance for CNP (c) and the moiré peak at n = −nS (d). The colors of the data points in c correspond to the same D values as in a, b, f and those in d are same as in e. The gaps are extracted by fitting Arrhenius activation equation to R vs T curves in the temperature range within 15–85 K. Insets show the variation of gaps with electric field. The ratio, being close to 3, shows that \({R}_{{\rm{NL}}}\propto {R}_{{\rm{L}}}^{3}\), and thus strongly supports bulk valley transport. e, f The scaling of nonlocal resistance with local resistance at different electric fields for n = −nS (e) and CNP (f). Here, temperature is used as a parameter to show the scaling.
