Fig. 2: Dispersion of α-MoO3 FP cavity with tGe.
From: Lithography-free IR polarization converters via orthogonal in-plane phonons in α-MoO3 flakes
a Simulated dependence of total absorption on wavelength/frequency and Ge thickness (tGe) where α-MoO3 thickness is kept constant at tMO = 0.15 μm for (a) x (ϕi = 0°) and (b) y (ϕi = 90°) phonons. Simulated electric field magnitude |E| in the cross section of the studied multilayer system for tMO = 0.15 μm and (c) tGe = 0.42 μm (m = 1), (d) tGe = 1.4 μm (m = 2) and (e) tGe = 2.4 μm (m = 3). Note that the scales in panels c–e are not the same due to the tGe difference. The dashed lines in panels a and b represent the FP mode orders. The dots on panel a mark the mode profile simulations of panels c–e.
