Fig. 3: Low-temperature longitudinal magnetoresistivity and Hall resistivity in isostructural HfTe5 and ZrTe5 at 50 mK.
From: Unconventional Hall response in the quantum limit of HfTe5
a Longitudinal electrical resistivity ρxx (blue, left axis) and Hall resistivity ρxy (red, right axis) of ZrTe5 as a function of B/BQL at T = 50 mK with the magnetic field B applied in z for 0 T ≤ B ≤ 3 T (upper panel) and 0 T ≤ B ≤ 9 T (lower panel). The blue arrows mark the onset of the Landau levels. BQL denotes the magnetic field of the onset of the N = 1 Landau level. The blue numbers label the index N of the Landau level and the red numbers label the corresponding value of ρxy with respect to (h/e2)π/kF,z. b Longitudinal electrical resistivity ρxx (blue, left axis) and Hall conductivity σxy (red, right axis) of ZrTe5 as a function of B at T = 50 mK with B applied in z for 0 T ≤ B ≤ 3 T (upper panel) and 0 T ≤ B ≤ 9 T (lower panel).
