Fig. 2: Hydroxide ion adsorption on the InSe/Gr surface.
From: Atomically thin photoanode of InSe/graphene heterostructure
a Jmax of a InSe/Gr monolayer device as a function of the NaOH concentration. Red dots are the experimental data. The red line is the prediction using Eq. (1) with a surface charge density of 1 mC m−2. The inset is Jmax of the bulk (thickness ~1 μm) InSe/Gr device as a function of the NaOH concentration. The black dots are the experimental data. The black dashed line is to guide the eye. b Electrochemical impedance spectroscopy of InSe/Gr and MoS2/Gr monolayer devices when the light is on and off. The inset shows an equivalent electrical circuit of the InSe/Gr anode electrochemical interface. The first semicircle close to origin represents the interface capacitance between the InSe/Gr and the Ti constant phase element (CPE), and the second semicircle represents the interface capacitance between the InSe/Gr and the PEC solution. For additional details, see Supplementary Methods, ‘EIS’ section.
