Fig. 2: Spectroscopic and electronic characterization.
From: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
a Electron energy loss spectroscopy (EELS) spectra from MTB-1, MZB-1, and MIB-1. b–d High-resolution XPS spectra for B 1s of MTB-1 and MTB-5, MZB-1 and MZB-5, and MIB-1 and MIB-5. e Interstitial boron (at%) as a function of total doped boron determined from XPS analysis in MTB-1 to MTB-5, MZB-1 to MZB-5, and MIB-1 to MIB-5. f–h Mott−Schottky plots for MTB-1 to MTB-5, MZB-1 to MZB-5, MIB-1 to MIB-5, and the undoped samples (MT, MZ, and MI). i Calculated carrier densities of MTB-1, MZB-1, MIB-1 and their corresponding pristine samples MT, MZ, and MI.
