Fig. 4: Nanorod optical scattering.
a, b The optical Mie scattering simulations of an array of cylindrical rods with refractive index of indium oxide at 400 and 500 nm incident wavelength. The array of cylindrical rods of 60 nm diameters near the scatterer point is shown, as marked by the white dot, under a plane wave at an incident angle of 30° to the x-axis. The scattering intensity plots under the a Ex and Ey b components of the incident plane wave are shown, respectively. c, d The near field and far-field scattering cross-sections at a range of scattering angles under several incident angles from 90° to 10° from the positive x-axis plane with 400 and 600 nm wavelengths, respectively. e SEM cross-sectional images of nanorods on 200 nm p-type/40 nm n-type silicon layers. The white scale bar represents 1 µm length. f Calculated equilibrium band diagram of p-type a-Si/n type a-Si/In2O3−x(OH)y system. g Photo-action spectroscopy of quartz rod coated with In2O3−x(OH)y nanorods (red), nanorods on p-type amorphous silicon (blue), and nanorods on n-type/p-type amorphous silicon (green). The nanorods on p-type silicon have increased CO rates in the green regime, while nanorods on n-type Si/p-type Si have a broader increase in CO rates across the blue-green regime. The simulated EQE of an n-type Si/p-type Si/indium-oxide stack is shown in orange.
