Fig. 3: Thermal properties of GST thin films and interfaces across different phases. | Nature Communications

Fig. 3: Thermal properties of GST thin films and interfaces across different phases.

From: Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Fig. 3

a Thermal conductivity of GST layer sandwiched between 5 nm W spacers for 40 nm (diamonds) and 160 nm (circles) GST films. The solid symbols correspond to the thermal conductivity of GST as it transitions through different phases upon heating and hollow symbols correspond to the thermal conductivity of h-GST upon cooling. b Effective thermal conductivity for 20-nm-thick GST film as a function of temperature across different phases of GST upon heating and cooling when annealed to 320 and 400 °C. c, d Thermal boundary conductance for as-deposited GST upon heating and h-GST upon cooling with 5 and 2 nm W spacer, respectively. The error bars are calculated based on 7% uncertainty in the GST film thickness. e, f Bright-field images of 40 and 160 nm GST films at 400 °C.

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