Fig. 4: Growth mechanism of V SACs@1T-WS2. | Nature Communications

Fig. 4: Growth mechanism of V SACs@1T-WS2.

From: One-step synthesis of single-site vanadium substitution in 1T-WS2 monolayers for enhanced hydrogen evolution catalysis

Fig. 4

a Stepwise-products experiments for the V SACs@1T-WS2 growth process. b HRTEM image of V2O3-nuclei film formed in the upstream of the sapphire substrate. c High-resolution HAADF-STEM image of 1T-VS2 formed in the downstream of V2O3-nuclei film/sapphire substrate. The red spheres and yellow spheres represent the V atoms and S atoms, respectively, in the schematic model of 1T-VS2 in the basal plane. Inset: low-resolution of HAADF-STEM image of VS2 domain. d High-resolution HAADF-STEM image of V SACs@1T-WS2 formed on the surface of V2O3-nuclei film. The V atoms are highlighted by the dashed white circles. e The proposed growth mechanism of V SACs@1T-WS2 formed on the V2O3 film. f Computed binding energy of WS2 unit on 1T-WS2 vs 1T-VS2 on the surface of V2O3 (001). Scale bars: (b) 5 nm; (c) 0.5 nm, inset 50 nm; (d) 0.5 nm.

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