Fig. 3: Photovoltaic performance.
From: An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
a Schematic of GeSe thin-film solar cell architecture. b Cross-sectional SEM image of the GeSe device. c Histogram of device efficiencies obtained from 100 devices. d J-V curve and e EQE spectrum of the GeSe solar cell independently certified by Newport Corporation (Newport Corporation PV Laboratory, certificate #1896). f J-V curves of a representative GeSe device measured under different intensities of simulated AM 1.5 G illumination. g Light intensity-dependent Voc of GeSe solar cells. Neutral-density filters (THORLABS) were used to adjust the light intensity.
