Fig. 2: Unique features of DMVC-OCF3, DMVC-OTMS, and VC for building stable interfacial layers.

Incorporation of DMVC-OCF3 and DMVC-OTMS in the VC scaffold leads to the creation of a flexible and robust SEI on the Si–C anode. DMVC-OTMS scavenges HF and deactivates PF5, resulting in compositional and structural stability of the interfacial layers on the electrodes. The Me (−CH3) moiety bonded to the VC scaffold provides ion channels, providing space for Li-ion transport in the SEI.