Fig. 7: SEM and TEM characterization of Si–C anodes after 400 cycles of NCM811/Si–C full cells at 25 °C.

a–f Surface morphologies of a pristine Si–C anode (a) and Si–C anodes obtained from NCM811/Si–C full cells cycled during 400 cycles at 25 °C with VC (b) or VC + DMVC-OCF3 + DMVC-OTMS (c), cross-sectional views of the pristine Si–C anode (d) and Si–C anodes from NCM811/Si–C full cells cycled during 400 cycles at 25 °C with VC (e) or VC + DMVC-OCF3 + DMVC-OTMS (f). g–i EDS mapping in TEM of the pristine Si–C anode (g) and Si–C anodes after 400 cycles with VC (h) or VC + DMVC-OCF3 + DMVC-OTMS (i).