Table 2 Hydrogen concentration profile.

From: 422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth

Atoms per cm3

UHQR

Control

Top of ~5 nm blanket nitride layer

1.0 × 1021 (1.11%)

NA

Top of LPCVD deposited waveguide core

5.7 × 1020 (0.63%)a

6.6 × 1021 (7.33%)

Bottom of LPCVD deposited waveguide core

2.7 × 1020 (0.30%)

1.6 × 1021 (1.78%)

  1. Secondary ion mass spectroscopy (SIMS) is used to compare an ultra-high Q resonator (UHQR) sample wafer with a low-pressure chemical vapor deposition (LPCVD) core, a ~5 nm blanket silicon nitride layer, and a 30-minute anneal, to a control sample wafer with only an LPCVD nitride core.
  2. aInterface between LPCVD deposited waveguide core and ~5 nm blanket nitride layer.
Back to article page