Fig. 1: Operation of a metallic nanowire superconducting switch.
From: A superconducting switch actuated by injection of high-energy electrons
a False-color scanning electron micrograph of a device identical to that under study, together with a schematic of the measurement setup. The silicon substrate is gray, the TiN nanowire blue and the gate electrode red. Another gate electrode (gray) was left grouded. b Differential resistance dV/dISD of the nanowire as a function of ISD, measured by sweeping up ISD starting from −50 μA. Critical current IC and retrapping current IR are indicated. Inset: temperature dependence of IC (blue dots) and IR (red squares). c Critical current IC in the nanowire as a function of gate voltage VG. d Absolute value of the gate current IG flowing between gate and nanowire as a function of VG. A linear component IG ~ 1 TΩ, attributed to leakage in the measurement setup, was subtracted from the data (see Supplementary Note 1). e Parametric plot of IC vs. IG. Obtained from the data in c and d.
