Fig. 3: Critical current suppression in various superconductors.
From: A superconducting switch actuated by injection of high-energy electrons
a, b Critical current IC and gate current IG as a function of gate voltage VG for a TiN wire on a 25 nm thick SiO2 film thermally grown on Si substrate. The wire is 2 μm long, 80 nm wide, and 20 nm thick. c, d Critical current IC and gate current IG as a function of gate voltage VG for a Ti wire on Si substrate. The wire is 2 μm long, 200 nm wide, and 30 nm thick. e, f Critical current IC and gate current IG as a function of gate voltage VG for a Nb wire on Si substrate. The wire is 2 μm long, 200 nm, wide, and 13 nm thick.
