Fig. 4: Spatially resolved suppression of the critical current.
From: A superconducting switch actuated by injection of high-energy electrons
a False-color scanning electron micrograph of a device as that under study. Colors are as in Fig. 1a. b Top: schematics of measurement configuration 1, where ISD always intersects the point of electron injection. Bottom: critical currents of the six segments as a function of gate voltage \({V}_{{\rm{G}}}^{{\rm{A}}}\). c Top: schematics of measurement configuration 2, where ISD does not necessarily intersect the point of electron injection. Bottom: critical currents of the six segments as a function of gate voltage \({V}_{{\rm{G}}}^{{\rm{A}}}\). d Absolute value of gate current \({I}_{{\rm{G}}}^{{\rm{A}}}\) as a function of gate voltage \({V}_{{\rm{G}}}^{{\rm{A}}}\). e Suppression factor S as a function of the distance between gate and nanowire segment, calculated from the data in c for \({V}_{{\rm{G}}}^{{\rm{A}}}=6\ {\rm{V}}\). The solid line is a fit to an exponential, resulting in a characteristic length scale λ = 1.8 μm.
