Table 1 Comparison of this work and previous works that employed ferroelectric P(VDF-TrFE), PZT and hafnium oxide as the gate dielectric of FeFET.
From: Van der Waals engineering of ferroelectric heterostructures for long-retention memory
Ferroelectric | Channel | P/E ratio | P/E speed | Endurance | Retention |
|---|---|---|---|---|---|
P(VDF-TrFE)31 | MoSe2 | > 105 | 50 μs/2 ms | 104 | > 2 × 103 s |
P(VDF-TrFE)33 | MEH-PPV | > 104 | 500 μs/50 μs | 103 | 2 × 105 s |
PZT41 | IGZO | 106 | 3 s | – | 103 s |
PZT42 | ZnO | 105 | 150 ms | – | 10 years |
Si:HfO243 | Si | ≈103 | 10 μs | 2 × 104 | 1 h |
Si:HfO244 | Si | > 100 | 1–10 μs | 105 | 72 h |
HZO45 | Si | 106 | 100 μs | 107 | 10 years |
HZO46 | Si | 104 | 0.5 μs | 106 | 10 years |
CIPS (this work) | MoS2 | > 107 | 5 μs | > 104 | 10 years |
