Fig. 2: Origin of enhanced GF value by photo illumination.
From: Giant gauge factor of Van der Waals material based strain sensors
a Calculated relative change of equivalent potential variation (\(\Delta \phi\)) of the SnS2 based strain sensor with strain (s) with and without external illumination. b Calculated relative change of \(\Delta \phi\) at zero strain (s) as a function of power density of illumination. c Calculated mobility as a function of strain in darkness (red line) and under 365 nm laser illumination (blue line). d Demonstration of the universality of GF enhancement phenomenon by photo illumination for Van der Waals semiconducting materials including SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2.
