Fig. 4: Quasi-static semiconductor finite element simulation to explain the physical process of the depletion layer establishment and destruction (DLED) mechanism when \(\Delta x = 0.5\) μm.

a Model structure diagram and physical process (the colour bar represent electron concentration). b Output electron current I_n along the bottom surface of n-Si with time t. c Electron concentration distribution with time, where white arrows represent the direction of the electron current (i.e., the reverse direction of the electron motion). d, e Distribution of the conduction band energy level E_c (red), valence band energy level E_v (blue), and quasi-electron Fermi level E_fn (black) at the A₁ B₁ cut line (d) (x = 2.6 μm, corresponding to the position of the depletion layer establishment) and A₂ B₂ cut line (e) (x = −2.1 μm, corresponding to the position of the depletion layer destruction) in c, respectively, where s corresponds to the position.