Fig. 4: Device encapsulation and operational stability tests on encapsulated small-molecule OSC bottom-contact, bottom-gate devices in ambient air. | Nature Communications

Fig. 4: Device encapsulation and operational stability tests on encapsulated small-molecule OSC bottom-contact, bottom-gate devices in ambient air.

From: Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Fig. 4

a Molecular structure of parylene N (top) and barrier properties of different types of parylene (bottom)49. b Schematic of a device encapsulated with parylene N, which selectively allows some O2 molecules to pass through, while effectively preventing the permeation of H2O molecules. c Trap DOS spectrum of an encapsulated device evaluated at various times during repeated operation in ambient air. d Time evolution of the magnitude of threshold voltage shifts |ΔVth| of an encapsulated device (solid circles) in comparison to an unencapsulated device (open circles). e Time evolution of the mobility μ normalized to the value at t = 0 min (red), and subthreshold slope S (blue), of an encapsulated device (solid circles) in comparison to an unencapsulated device (open circles). f Time evolution of the saturation regime transfer characteristics (ID vs VGS at VDS = −60 V) during repeated transistor operation. The left and right axes show the square root and the logarithm of ID, respectively.

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