Fig. 5: Bias stress measurements on encapsulated small molecule and polymer OFET devices. | Nature Communications

Fig. 5: Bias stress measurements on encapsulated small molecule and polymer OFET devices.

From: Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Fig. 5

a Output characteristics of a small molecule OSC device at various fixed gate-voltages. The molecular structure of the molecule, namely TnHS BDT trimer, is also included. b Transfer characteristics of the same device acquired at VDS = −35 V prior to stressing (black) and after 500 min of stressing (red) under the application of a continuous drain voltage and a dynamic gate bias pulsed at 10 s interval at VDS = VGS = −35 V. c Output characteristics of a polymer device at various fixed gate-voltage. The molecular structure of the polymer, namely IDT-BT, is also included. d Transfer characteristics of the same IDT-BT device acquired at VDS = −35 V prior to stressing (black) and after 500 min of stressing (red) under the application of a continuous drain voltage and a dynamic gate bias pulsed at 10 s interval at VDS = VGS = −35 V.

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