Fig. 2: Magnetoelectric switching.
From: Engineering new limits to magnetostriction through metastability in iron-gallium alloys
a Schematic of the Fe1−xGax/PMN-PT device. Voltage is applied across the substrate, using the device as a top ground, and resistance is measured along the bar as a function of magnetic field strength and direction (\(\phi\)). b Colormap of low-field (50 Oe) AMR curves fit to \({{\cos }}\left(2\theta \right)\), showing the normalized resistance as a function of magnetic field direction (\(\theta\)) and applied electric field. The overlain points correspond to the calculated phase shift from the data, which is the direction of magnetization, \(\phi\). The two saturated polarization states of the ferroelectric show a 90\(^\circ\) phase shift in the curve, demonstrating a 90\(^\circ\) switching of magnetization. c Hysteresis of the anisotropy axis, with respect to the direction of the device (x), as a function of electric field, and effective converse magnetoelectric coefficient \((|{\alpha }_{{\rm{eff}}}|)\), reaching a maximum value of ~2.0 × 10−5 s m−1 during switching. The error bars represent the \(\pm 5^\circ\) angular resolution with one standard deviation of the fit to \({{\cos }}\left(2\theta \right)\). Parts (b) and (c) show the representative 30% Ga sample with the largest magnetoelectric coefficient. The full data set is shown in Sup. Fig. S3.
