Fig. 4: Electrical detection of the spin states.
From: Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet
a The transverse conductivity σyx(H) as a function of magnetic fields along the c-axis, taken at various temperatures. The σyx(H) data are nicely reproduced by the field-dependent magnetization M(H) (black solid line) with a scaling factor SH ≈ 0.3 V−1, following the linear relation of σyx(H) = SHM(H). b Magnetoresistance Δρ(H)/ρ(0) under in-plane magnetic fields H, parallel (open) or perpendicular (solid) to the current I along the a-axis. The low field spin–flop transition field \({H}_{{\rm{sf}}}^{ab}\) and the high field saturation field \({H}_{{\rm{sat}}}^{ab}\) are indicated by the arrows. c Spin configurations with different relative orientations of the magnetic field H and the current I. At low H, the antiferromagnetically coupled spins are aligned perpendicular to H, either H∥I (a) or H⊥I (b). At high H, the saturated spins are aligned parallel to H, either H∥I (c) or H⊥I (d). d Anisotropic magnetoresistance ΔρAMR as a function of temperature and in-plane magnetic field. The low-field and high-field AMR, determined by the relative orientation of Neel vector and the saturated magnetization against the current direction, respectively, which results in a sign change.
