Fig. 1: Electrical characterization of the unit self-rectifying resistive memory cell (SRMC).
From: Self-rectifying resistive memory in passive crossbar arrays
a DC I–V characteristics of 30 SRMCs. Arrows indicate switching direction. Readable current margin verified at 2 V is 0.4–2 nA. b Resistance states programmed by varying amplitude of programming voltage pulse for three pulse widths (50 μs, 100 μs, and 1 ms). c Read-out current in response to read-out pulse (2 V and 5 μs in amplitude and width, respectively). Current evaluated from voltage across 1 MΩ internal resistor of oscilloscope. d Memory retention of characteristic of 20 SRMCs in HRS and LRS as programmed and after baking (at 85 °C for 2 h). e Programming endurance of SRMC using 4.2 V/100 μs set and −4.3 V/100 μs reset pulses. f Read disturb characteristic of SRMC using repetitive reading pulse of 2 V/10 μs. (gray and red circle for LRS and HRS, respectively).
