Fig. 4: Resistive switching simulation.
From: Self-rectifying resistive memory in passive crossbar arrays
a One-dimensional configuration of the SRMC for simulation. b Simulated I–V loop (quasi-static behavior) in comparison with experimental data. c Simulated switching behaviors in response to voltage pulses of different widths and amplitudes. d Simulated LRS retention for the HSO2-only cell (Dev 1), HSO1/HSO2 cell (Dev 2), and HSO1/Al2O3/HSO2 SRMC (Dev 3). e, f Simulated oxygen vacancy distributions in the trilayer SRMC and HSO1/HSO2 cell in the LRS (upper panel) and HRS (lower panel). The change of the distribution in each state was monitored in the time range (0–7200 s). g Retention of areal density of oxygen vacancies in the LRS in each layer of the trilayer and bilayer cells.
