Fig. 6: 30 × 30 CA of SRMCs.
From: Self-rectifying resistive memory in passive crossbar arrays
a Top view of CA layout. b Scanning electron microscope image of the array. The inset shows an atomic force microscope image of a unit SRMC. Schematic of c Scheme 1 and d Scheme 2. Appended I–V loops of 100 randomly chosen SRMCs (three loops for each SRMC), which were measured using e Scheme 1 and f Scheme 2. For Vop = 3 V, voltage across selected cell (red-filled circle), unselected group 1 cell (blue-filled circle), and unselected group 2 cell (black-filled circle) is indicated. Open circuit current was also plotted (blue line). The currents read using Scheme 1 and Scheme 2 on the 100 SRMCs are shown in the distributions in g and h, respectively. Scheme 1: the mean current m and standard deviation σ for HRS and LRS are (6.5 × 10−11 A, 1.8 × 10−11) and (9.3 × 10−10 A, 5.1 × 10−10), respectively. Scheme 2: (6.2 × 10−11 A, 3.2 × 10−11) and (1.0 × 10−9 A, 4.1 × 10−10) for HRS and LRS, respectively.
