Fig. 1: RIETs enabled by an MQW for highly-efficient electrically-driven SP sources. | Nature Communications

Fig. 1: RIETs enabled by an MQW for highly-efficient electrically-driven SP sources.

From: Highly-efficient electrically-driven localized surface plasmon source enabled by resonant inelastic electron tunneling

Fig. 1

a Schematic drawing of the electrically-driven SP source (not to scale). An insulating MQW junction is biased via the upper conducting ITO and the lower metallic TiN. Electrons may inelastically tunnel through this MQW junction by coupling to a plasmonic mode of energy \(h\nu\) supported by AgNRs on top of the junction. b RIET via the MQW junction. In this MQW, the resonant state |5〉 is responsible for the RIET process that emits SPs with the energy \(h\nu\) in the visible/NIR spectral range. c Transmission electron microscopy (TEM) cross-section of an MQW heterostructure. The layers on top of the MQW are the protective layers used only for TEM cross-section preparation during the focused ion beam (FIB) cutting process. d High-resolution TEM (HRTEM) image showing an enlarged view of the MQW.

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