Fig. 4: Characterization of junctions with impedance spectroscopy. | Nature Communications

Fig. 4: Characterization of junctions with impedance spectroscopy.

From: A single atom change turns insulating saturated wires into molecular conductors

Fig. 4

a Contact resistance RC vs. X for Ag–S(CH2)14X//GaOx/EGaIn junctions at DC of 0 V and sinusoidal perturbation of 30 mV. Log-resistance of SAM, log10RSAM, (b) and RC (c) vs. n for Ag–S(CH2)nBr//GaOx/EGaIn junctions. The solid black line represents a fit to Eq. (2). d Corresponding dielectric constant εr vs. X for Ag–S(CH2)14X//GaOx/EGaIn junctions. The error bars are the standard deviations of three independent measurements. Dashed lines are visual guides.

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