Fig. 4: Deep-level defects characterization.
From: Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics
DLTS signals of Sb-rich (a) and S-rich Sb2S3 films (b) at pulse voltage ranging from 0.1 to 0.5 V, synergized with an identical pulse-width optical pulse. ΔC is the variation of capcitance.
